Zhang XA - Search Results

1

Improved Thermal Anisotropy of Multi-Layer Tungsten Telluride on Silicon Substrate.

Fang M, Liu X, Liu J, Chen Y, Su Y, Wei Y, Zhou Y, Peng G, Cai W, Deng C, Zhang XA. Fang M, et al. Among authors: zhang xa. Nanomaterials (Basel). 2023 Jun 7;13(12):1817. doi: 10.3390/nano13121817. Nanomaterials (Basel). 2023. PMID: 37368247 Free PMC article.

2

All-carbon based graphene field effect transistor with graphitic electrodes fabricated by e-beam direct writing on PMMA.

Chen W, Yu Y, Zheng X, Qin S, Wang F, Fang J, Wang G, Wang C, Wang L, Peng G, Zhang XA. Chen W, et al. Among authors: zhang xa. Sci Rep. 2015 Jul 21;5:12198. doi: 10.1038/srep12198. Sci Rep. 2015. PMID: 26195033 Free PMC article.

3

Study on adsorption and desorption of ammonia on graphene.

Zhang Z, Zhang X, Luo W, Yang H, He Y, Liu Y, Zhang X, Peng G. Zhang Z, et al. Nanoscale Res Lett. 2015 Dec;10(1):359. doi: 10.1186/s11671-015-1060-7. Epub 2015 Sep 16. Nanoscale Res Lett. 2015. PMID: 26377212 Free PMC article.

4

An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

Yang H, Qin S, Zheng X, Wang G, Tan Y, Peng G, Zhang X. Yang H, et al. Nanomaterials (Basel). 2017 Sep 22;7(10):286. doi: 10.3390/nano7100286. Nanomaterials (Basel). 2017. PMID: 28937619 Free PMC article.

5

Controlled Layer-by-Layer Oxidation of MoTe₂ via O₃ Exposure.

Zheng X, Wei Y, Deng C, Huang H, Yu Y, Wang G, Peng G, Zhu Z, Zhang Y, Jiang T, Qin S, Zhang R, Zhang X. Zheng X, et al. ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30045-30050. doi: 10.1021/acsami.8b11003. Epub 2018 Aug 31. ACS Appl Mater Interfaces. 2018. PMID: 30146869

6

Interlayer Difference of Bilayer-Stacked MoS₂ Structure: Probing by Photoluminescence and Raman Spectroscopy.

Zhang X, Zhang R, Zheng X, Zhang Y, Zhang X, Deng C, Qin S, Yang H. Zhang X, et al. Nanomaterials (Basel). 2019 May 24;9(5):796. doi: 10.3390/nano9050796. Nanomaterials (Basel). 2019. PMID: 31137613 Free PMC article.

7

A homogeneous p-n junction diode by selective doping of few layer MoSe₂ using ultraviolet ozone for high-performance photovoltaic devices.

Zheng X, Wei Y, Liu J, Wang S, Shi J, Yang H, Peng G, Deng C, Luo W, Zhao Y, Li Y, Sun K, Wan W, Xie H, Gao Y, Zhang X, Huang H. Zheng X, et al. Nanoscale. 2019 Jul 28;11(28):13469-13476. doi: 10.1039/c9nr04212a. Epub 2019 Jul 9. Nanoscale. 2019. PMID: 31287485

8

In-plane anisotropy in twisted bilayer graphene probed by Raman spectroscopy.

Zhang X, Zhang R, Wang Y, Zhang Y, Jiang T, Deng C, Zhang X, Qin S. Zhang X, et al. Nanotechnology. 2019 Oct 25;30(43):435702. doi: 10.1088/1361-6528/ab33e0. Epub 2019 Jul 19. Nanotechnology. 2019. PMID: 31323650

9

Bolometric Effect in Bi₂ O₂ Se Photodetectors.

Yang H, Tan C, Deng C, Zhang R, Zheng X, Zhang X, Hu Y, Guo X, Wang G, Jiang T, Zhang Y, Peng G, Peng H, Zhang X, Qin S. Yang H, et al. Small. 2019 Oct;15(43):e1904482. doi: 10.1002/smll.201904482. Epub 2019 Sep 11. Small. 2019. PMID: 31512402

10

Controlled growth of MoS₂ via surface-energy alterations.

Wan W, Zhan L, Shih TM, Zhu Z, Lu J, Huang J, Zhang Y, Huang H, Zhang X, Cai W. Wan W, et al. Nanotechnology. 2020 Jan 17;31(3):035601. doi: 10.1088/1361-6528/ab49a2. Epub 2019 Oct 1. Nanotechnology. 2020. PMID: 31574488

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