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Highly selective etching of SiNxover SiO2using ClF3/Cl2remote plasma.
Nanotechnology. 2023 Aug 29;34(46). doi: 10.1088/1361-6528/acec7a.
Nanotechnology. 2023.
PMID: 37531942
Selective etching of silicon nitride over silicon oxide using ClF3/H2 remote plasma.
Lee WO, Kim KH, Kim DS, Ji YJ, Kang JE, Tak HW, Park JW, Song HD, Kim KS, Cho BO, Kim YL, Yeom GY.
Lee WO, et al. Among authors: tak hw.
Sci Rep. 2022 Apr 5;12(1):5703. doi: 10.1038/s41598-022-09252-3.
Sci Rep. 2022.
PMID: 35383214
Free PMC article.
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Characteristics of silicon nitride deposited by very high frequency (162 MHz)-plasma enhanced atomic layer deposition using bis(diethylamino)silane.
Byun JY, Ji YJ, Kim KH, Kim KS, Tak HW, Ellingboe AR, Yeom GY.
Byun JY, et al. Among authors: tak hw.
Nanotechnology. 2021 Feb 12;32(7):075706. doi: 10.1088/1361-6528/abb974.
Nanotechnology. 2021.
PMID: 32942270
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Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma.
Sung D, Wen L, Tak H, Lee H, Kim D, Yeom G.
Sung D, et al.
Materials (Basel). 2022 Feb 10;15(4):1300. doi: 10.3390/ma15041300.
Materials (Basel). 2022.
PMID: 35207841
Free PMC article.
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Radio Frequency Induction Welding of Silver Nanowire Networks for Transparent Heat Films.
Oh J, Wen L, Tak H, Kim H, Kim G, Hong J, Chang W, Kim D, Yeom G.
Oh J, et al.
Materials (Basel). 2021 Aug 8;14(16):4448. doi: 10.3390/ma14164448.
Materials (Basel). 2021.
PMID: 34442970
Free PMC article.
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Analysis of Optical Plasma Monitoring in Plasma-Enhanced Atomic Layer Deposition Process of Al₂O₃.
Arshad MZ, Tak HW, Kim HG, Hong SJ.
Arshad MZ, et al. Among authors: tak hw.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1657-1665. doi: 10.1166/jnn.2019.16198.
J Nanosci Nanotechnol. 2019.
PMID: 30469240
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