Peng LM - Search Results

1

Aligned carbon nanotube-based electronics on glass wafer.

Cheng X, Pan Z, Fan C, Wu Z, Ding L, Peng LM. Cheng X, et al. Among authors: peng lm. Sci Adv. 2024 Mar 22;10(12):eadl1636. doi: 10.1126/sciadv.adl1636. Epub 2024 Mar 22. Sci Adv. 2024. PMID: 38517964 Free PMC article.

2

Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.

Ding L, Wang Z, Pei T, Zhang Z, Wang S, Xu H, Peng F, Li Y, Peng LM. Ding L, et al. Among authors: peng lm, peng f. ACS Nano. 2011 Apr 26;5(4):2512-9. doi: 10.1021/nn102091h. Epub 2011 Mar 11. ACS Nano. 2011. PMID: 21370813

3

CMOS-based carbon nanotube pass-transistor logic integrated circuits.

Ding L, Zhang Z, Liang S, Pei T, Wang S, Li Y, Zhou W, Liu J, Peng LM. Ding L, et al. Among authors: peng lm. Nat Commun. 2012 Feb 14;3:677. doi: 10.1038/ncomms1682. Nat Commun. 2012. PMID: 22334080 Free PMC article.

4

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

Chen B, Zhang P, Ding L, Han J, Qiu S, Li Q, Zhang Z, Peng LM. Chen B, et al. Among authors: peng lm. Nano Lett. 2016 Aug 10;16(8):5120-8. doi: 10.1021/acs.nanolett.6b02046. Epub 2016 Jul 29. Nano Lett. 2016. PMID: 27459084

5

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Yang Y, Ding L, Han J, Zhang Z, Peng LM. Yang Y, et al. Among authors: peng lm. ACS Nano. 2017 Apr 25;11(4):4124-4132. doi: 10.1021/acsnano.7b00861. Epub 2017 Mar 29. ACS Nano. 2017. PMID: 28333433

6

High-Performance Carbon Nanotube Complementary Electronics and Integrated Sensor Systems on Ultrathin Plastic Foil.

Zhang H, Xiang L, Yang Y, Xiao M, Han J, Ding L, Zhang Z, Hu Y, Peng LM. Zhang H, et al. Among authors: peng lm. ACS Nano. 2018 Mar 27;12(3):2773-2779. doi: 10.1021/acsnano.7b09145. Epub 2018 Feb 1. ACS Nano. 2018. PMID: 29378119

7

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics.

Liu L, Han J, Xu L, Zhou J, Zhao C, Ding S, Shi H, Xiao M, Ding L, Ma Z, Jin C, Zhang Z, Peng LM. Liu L, et al. Among authors: peng lm. Science. 2020 May 22;368(6493):850-856. doi: 10.1126/science.aba5980. Science. 2020. PMID: 32439787

8

Carbon Nanotube Based Radio Frequency Transistors for K-Band Amplifiers.

Zhou J, Liu L, Shi H, Zhu M, Cheng X, Ren L, Ding L, Peng LM, Zhang Z. Zhou J, et al. Among authors: peng lm. ACS Appl Mater Interfaces. 2021 Aug 11;13(31):37475-37482. doi: 10.1021/acsami.1c07782. Epub 2021 Aug 2. ACS Appl Mater Interfaces. 2021. PMID: 34340306

9

Improving Carbon Nanotube-Based Radiofrequency Field-Effect Transistors by the Device Architecture and Doping Process.

Ren L, Zhou J, Pan Z, Li H, Ding L, Zhang Z, Peng LM. Ren L, et al. Among authors: peng lm. ACS Appl Mater Interfaces. 2024 Mar 13;16(10):12813-12820. doi: 10.1021/acsami.3c19479. Epub 2024 Feb 27. ACS Appl Mater Interfaces. 2024. PMID: 38412248

10

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Zhang Z, Wang S, Ding L, Liang X, Pei T, Shen J, Xu H, Chen Q, Cui R, Li Y, Peng LM. Zhang Z, et al. Among authors: peng lm. Nano Lett. 2008 Nov;8(11):3696-701. doi: 10.1021/nl8018802. Epub 2008 Oct 24. Nano Lett. 2008. PMID: 18947214

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