CMOS-based carbon nanotube pass-transistor logic integrated circuits

Nat Commun. 2012 Feb 14:3:677. doi: 10.1038/ncomms1682.

Abstract

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Computer Systems
  • Equipment Design
  • Materials Testing
  • Metals / chemistry
  • Microscopy, Electron, Scanning / methods
  • Nanotechnology / methods*
  • Nanotubes / chemistry
  • Nanotubes, Carbon / chemistry*
  • Oxides / chemistry
  • Physics / methods
  • Semiconductors
  • Software
  • Transistors, Electronic*

Substances

  • Metals
  • Nanotubes, Carbon
  • Oxides