Ho JC - Search Results

1

Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors.

Sun J, Zhuang X, Fan Y, Guo S, Cheng Z, Liu D, Yin Y, Tian Y, Pang Z, Wei Z, Song X, Liao L, Chen F, Ho JC, Yang ZX. Sun J, et al. Among authors: ho jc. Small. 2021 Sep;17(37):e2102323. doi: 10.1002/smll.202102323. Epub 2021 Jul 19. Small. 2021. PMID: 34288454

2

Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

Zou X, Liu X, Wang C, Jiang Y, Wang Y, Xiao X, Ho JC, Li J, Jiang C, Xiong Q, Liao L. Zou X, et al. Among authors: ho jc. ACS Nano. 2013 Jan 22;7(1):804-10. doi: 10.1021/nn305289w. Epub 2012 Dec 17. ACS Nano. 2013. PMID: 23228028

3

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors.

Han N, Wang F, Hou JJ, Yip SP, Lin H, Xiu F, Fang M, Yang Z, Shi X, Dong G, Hung TF, Ho JC. Han N, et al. Among authors: ho jc. Adv Mater. 2013 Aug 27;25(32):4445-51. doi: 10.1002/adma.201301362. Epub 2013 Jun 20. Adv Mater. 2013. PMID: 23784849

4

Rational design of sub-parts per million specific gas sensors array based on metal nanoparticles decorated nanowire enhancement-mode transistors.

Zou X, Wang J, Liu X, Wang C, Jiang Y, Wang Y, Xiao X, Ho JC, Li J, Jiang C, Fang Y, Liu W, Liao L. Zou X, et al. Among authors: ho jc. Nano Lett. 2013 Jul 10;13(7):3287-92. doi: 10.1021/nl401498t. Epub 2013 Jun 27. Nano Lett. 2013. PMID: 23796312

5

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Han N, Hou JJ, Wang F, Yip S, Yen YT, Yang ZX, Dong G, Hung T, Chueh YL, Ho JC. Han N, et al. Among authors: ho jc. ACS Nano. 2013 Oct 22;7(10):9138-46. doi: 10.1021/nn403767j. Epub 2013 Sep 9. ACS Nano. 2013. PMID: 24016352

6

Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.

Yang ZX, Han N, Wang F, Cheung HY, Shi X, Yip S, Hung T, Lee MH, Wong CY, Ho JC. Yang ZX, et al. Among authors: ho jc. Nanoscale. 2013 Oct 21;5(20):9671-6. doi: 10.1039/c3nr03080f. Nanoscale. 2013. PMID: 24056889

7

Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications.

Yang ZX, Wang F, Han N, Lin H, Cheung HY, Fang M, Yip S, Hung T, Wong CY, Ho JC. Yang ZX, et al. Among authors: ho jc. ACS Appl Mater Interfaces. 2013 Nov 13;5(21):10946-52. doi: 10.1021/am403161t. Epub 2013 Oct 23. ACS Appl Mater Interfaces. 2013. PMID: 24107082

8

Single InAs nanowire room-temperature near-infrared photodetectors.

Miao J, Hu W, Guo N, Lu Z, Zou X, Liao L, Shi S, Chen P, Fan Z, Ho JC, Li TX, Chen XS, Lu W. Miao J, et al. Among authors: ho jc. ACS Nano. 2014 Apr 22;8(4):3628-35. doi: 10.1021/nn500201g. Epub 2014 Mar 7. ACS Nano. 2014. PMID: 24592971

9

Interface engineering for high-performance top-gated MoS2 field-effect transistors.

Zou X, Wang J, Chiu CH, Wu Y, Xiao X, Jiang C, Wu WW, Mai L, Chen T, Li J, Ho JC, Liao L. Zou X, et al. Among authors: ho jc. Adv Mater. 2014 Sep;26(36):6255-61. doi: 10.1002/adma.201402008. Epub 2014 Jul 28. Adv Mater. 2014. PMID: 25070646

10

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition.

Han N, Wang F, Yang Z, Yip S, Dong G, Lin H, Fang M, Hung T, Ho JC. Han N, et al. Among authors: ho jc. Nanoscale Res Lett. 2014 Jul 10;9(1):347. doi: 10.1186/1556-276X-9-347. eCollection 2014. Nanoscale Res Lett. 2014. PMID: 25114641 Free PMC article.

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