Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Abstract

A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.

Keywords: III-V nanowire field-effect transistors; contact printing; inverters; metal decoration; n-channel metal-oxide-semiconductor (NMOS); threshold voltage modulation.