Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors

Jiamin Sun; Xinming Zhuang; Yibo Fan; Shuai Guo; Zichao Cheng; Dong Liu; Yanxue Yin; Yufeng Tian; Zhiyong Pang; Zhipeng Wei; Xiufeng Song; Lei Liao; Feng Chen; Johnny C Ho; Zai-Xing Yang

doi:10.1002/smll.202102323

Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors

Small. 2021 Sep;17(37):e2102323. doi: 10.1002/smll.202102323. Epub 2021 Jul 19.

Authors

Jiamin Sun^{1

2}, Xinming Zhuang¹, Yibo Fan¹, Shuai Guo³, Zichao Cheng⁴, Dong Liu^{1

2}, Yanxue Yin¹, Yufeng Tian¹, Zhiyong Pang¹, Zhipeng Wei³, Xiufeng Song⁴, Lei Liao⁵, Feng Chen¹, Johnny C Ho⁶, Zai-Xing Yang^{1

2}

Affiliations

¹ School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
² State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China.
³ State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
⁴ Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
⁵ Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China.
⁶ Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.

PMID: 34288454
DOI: 10.1002/smll.202102323

Abstract

The relative low hole mobility of p-channel building block device challenges the continued miniaturization of modern electronic chips. Metal-semiconductor junction is always an efficient strategy to control the carrier concentration of channel semiconductor, benefiting the carrier mobility regulation of building block device. In this work, complementary metal oxide semiconductor (CMOS)-compatible metals are selected to deposit on the surface of the important p-channel building block of GaSb nanowire field-effect-transistors (NWFETs), demonstrating the efficient strategy of hole mobility enhancement by metal-semiconductor junction. When deposited with lower work function metal of Al, the peak hole mobility of GaSb NWFET can be enhanced to as high as ≈3372 cm² V^-1 s^-1 , showing three times than the un-deposited one. The as-studied metal-semiconductor junction is also efficient for the hole mobility enhancement of other p-channel devices, such as GaAs NWFET, GaAs film FET, and WSe₂ FET. With the enhanced mobility, the as-constructed CMOS inverter shows good invert characteristics, showing a relatively high gain of ≈18.1. All results may be regarded as important advances to the next-generation electronics.

Keywords: GaSb nanowires; carrier concentration control; field-effect-transistors; hole mobility; metal-semiconductor junction.

Abstract

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