Grundmann M - Search Results

1

Correlation of Interface Impurities and Chemical Gradients with High Magnetoelectric Coupling Strength in Multiferroic BiFeO₃-BaTiO₃ Superlattices.

Lorenz M, Hirsch D, Patzig C, Höche T, Hohenberger S, Hochmuth H, Lazenka V, Temst K, Grundmann M. Lorenz M, et al. Among authors: grundmann m. ACS Appl Mater Interfaces. 2017 Jun 7;9(22):18956-18965. doi: 10.1021/acsami.7b04084. Epub 2017 May 25. ACS Appl Mater Interfaces. 2017. PMID: 28508622

2

Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section.

Nobis T, Kaidashev EM, Rahm A, Lorenz M, Grundmann M. Nobis T, et al. Among authors: grundmann m. Phys Rev Lett. 2004 Sep 3;93(10):103903. doi: 10.1103/PhysRevLett.93.103903. Epub 2004 Sep 3. Phys Rev Lett. 2004. PMID: 15447405

3

Spin manipulation in Co-doped ZnO.

Xu Q, Hartmann L, Zhou S, Mcklich A, Helm M, Biehne G, Hochmuth H, Lorenz M, Grundmann M, Schmidt H. Xu Q, et al. Among authors: grundmann m. Phys Rev Lett. 2008 Aug 15;101(7):076601. doi: 10.1103/PhysRevLett.101.076601. Epub 2008 Aug 11. Phys Rev Lett. 2008. PMID: 18764561

4

Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires.

Cao BQ, Zúñiga-Pérez J, Boukos N, Czekalla C, Hilmer H, Lenzner J, Travlos A, Lorenz M, Grundmann M. Cao BQ, et al. Among authors: grundmann m. Nanotechnology. 2009 Jul 29;20(30):305701. doi: 10.1088/0957-4484/20/30/305701. Epub 2009 Jul 8. Nanotechnology. 2009. PMID: 19584419

5

Gold nanostructure matrices by diffraction mask-projection laser ablation: extension to previously inaccessible substrates.

Mäder M, Perlt S, Höche T, Hilmer H, Grundmann M, Rauschenbach B. Mäder M, et al. Among authors: grundmann m. Nanotechnology. 2010 Apr 30;21(17):175304. doi: 10.1088/0957-4484/21/17/175304. Epub 2010 Apr 6. Nanotechnology. 2010. PMID: 20368685

6

Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

Frenzel H, Lajn A, von Wenckstern H, Lorenz M, Schein F, Zhang Z, Grundmann M. Frenzel H, et al. Among authors: grundmann m. Adv Mater. 2010 Dec 14;22(47):5332-49. doi: 10.1002/adma.201001375. Adv Mater. 2010. PMID: 20878625 Review.

7

Occurrence of rotation domains in heteroepitaxy.

Grundmann M, Böntgen T, Lorenz M. Grundmann M, et al. Phys Rev Lett. 2010 Oct 1;105(14):146102. doi: 10.1103/PhysRevLett.105.146102. Epub 2010 Sep 28. Phys Rev Lett. 2010. PMID: 21230847

8

Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors.

Lorenz M, von Wenckstern H, Grundmann M. Lorenz M, et al. Among authors: grundmann m. Adv Mater. 2011 Dec 1;23(45):5383-6. doi: 10.1002/adma.201103087. Epub 2011 Oct 14. Adv Mater. 2011. PMID: 21997566

9

(55)Mn pulsed ENDOR spectroscopy of Mn(2+) ions in ZnO thin films and single crystal.

Böttcher R, Pöppl A, Lorenz M, Friedländer S, Spemann D, Grundmann M. Böttcher R, et al. Among authors: grundmann m. J Magn Reson. 2014 Aug;245:79-86. doi: 10.1016/j.jmr.2014.05.012. Epub 2014 Jun 13. J Magn Reson. 2014. PMID: 24993844

10

Interface recombination current in type II heterostructure bipolar diodes.

Grundmann M, Karsthof R, von Wenckstern H. Grundmann M, et al. ACS Appl Mater Interfaces. 2014 Sep 10;6(17):14785-9. doi: 10.1021/am504454g. Epub 2014 Aug 21. ACS Appl Mater Interfaces. 2014. PMID: 25136986

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