Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

Abstract

Tungsten oxide is currently used as gate insulator in pH-sensing ion-sensitive field-effect transistors (ISFETs) and in electrochromic devices. Its great potential as a high-κ dielectric with high transparency and temperature stability is reported. Owing to the low gate voltage sweep necessary to turn the transistor on and off, a possible application could be as a low-voltage pixel driver in active-matrix displays in harsh environments.