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Page 1
Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors.
Materials (Basel). 2021 Feb 2;14(3):683. doi: 10.3390/ma14030683.
Materials (Basel). 2021.
PMID: 33540719
Free PMC article.
High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices.
Min SJ, Shin MC, Thi Nguyen N, Oh JM, Koo SM.
Min SJ, et al. Among authors: shin mc.
Materials (Basel). 2020 Jan 17;13(2):445. doi: 10.3390/ma13020445.
Materials (Basel). 2020.
PMID: 31963426
Free PMC article.
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Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter.
Shin MC, Lee YJ, Kim DH, Jung SW, Schweitz MA, Shin WH, Oh JM, Park C, Koo SM.
Shin MC, et al.
Materials (Basel). 2021 Mar 8;14(5):1296. doi: 10.3390/ma14051296.
Materials (Basel). 2021.
PMID: 33800449
Free PMC article.
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Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process Parameters.
Shin MC, Chung HS, Ahn BS, Cui HF, Kim SY, Kang EG.
Shin MC, et al.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1670-1672. doi: 10.1166/jnn.2019.16207.
J Nanosci Nanotechnol. 2019.
PMID: 30469242
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