Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors

Seung-Woo Jung; Myeong-Cheol Shin; Michael A Schweitz; Jong-Min Oh; Sang-Mo Koo

doi:10.3390/ma14030683

Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors

Materials (Basel). 2021 Feb 2;14(3):683. doi: 10.3390/ma14030683.

Authors

Seung-Woo Jung^{1

2}, Myeong-Cheol Shin^{1

2}, Michael A Schweitz¹, Jong-Min Oh¹, Sang-Mo Koo¹

Affiliations

¹ Department Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.
² Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Gokisocho, Showa Ward, Nagoya, Aichi 466-8555, Japan.

Abstract

In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing in N₂ or O₂ gas. The chemical composition of the film was determined by X-ray photoelectron spectroscopy (XPS) before and after annealing, and its electrical properties were evaluated by plotting a current-voltage (I-V) curve. The voltage-temperature (V-T) characteristics of the sensor were extracted from the current-voltage-temperature (I-V-T) plots constructed in the temperature range between 475 and 300 K in steps of 25 K. Sensitivities of 9.77, 9.37, and 2.16 mV/K were obtained for the as-grown, N₂-annealed, and O₂-annealed samples, respectively.

Keywords: 4H-SiC; AlN; Schottky barrier diodes; XPS; temperature sensor.

Abstract

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