Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process Parameters

Myeong Cheol Shin; Hun-Suk Chung; Byung-Sub Ahn; Hua-Feng Cui; Se Young Kim; Ey Goo Kang

doi:10.1166/jnn.2019.16207

Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process Parameters

J Nanosci Nanotechnol. 2019 Mar 1;19(3):1670-1672. doi: 10.1166/jnn.2019.16207.

Authors

Myeong Cheol Shin¹, Hun-Suk Chung¹, Byung-Sub Ahn¹, Hua-Feng Cui¹, Se Young Kim¹, Ey Goo Kang¹

Affiliation

¹ Department of Photovoltaic Engineering, Far East University, Chungbuk 369-700, Korea.

PMID: 30469242
DOI: 10.1166/jnn.2019.16207

Abstract

In this paper, we analyzed the electrical characteristics of 3.3 kV super junction FS IGBT as next generation power device by structural design. The device parameters were extracted by design and process simulation. Especially, to obtain optimal breakdown voltage, we researched the breakdown characteristic. To begin with, we confirmed that the breakdown voltage was decreased as trench depth was increased. And we analyzed the breakdown voltage according to p-pillar dose. As a result of experiment, we confirmed that the breakdown voltage was increased as p-pillar dose was increased. To obtain over 3.3 kV, the dose of p-pillar was 5×10¹³ cm^-2, the resistivity of epi layer was 140 Ω·cm. We will extract design and process parameters considering on state voltage drop.