Zhu J - Search Results

1

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L. Liang F, et al. Among authors: zhu j. Nanomaterials (Basel). 2018 Dec 10;8(12):1026. doi: 10.3390/nano8121026. Nanomaterials (Basel). 2018. PMID: 30544659 Free PMC article.

2

[An open-label, multicentric clinical trial to evaluate the efficacy and impact on bone metabolism of recombinant human tumor necrosis factor-α receptor II IgG Fc fusion protein with methotrexate in active rheumatoid arthritis: 24-week clinical and radiographic results from ReABLE study].

Wu QJ, Zhang ZL, Li ZB, Xu D, Li GT, Geng LF, Li MT, Wang Y, Zhu JJ, Hao YJ, Hui NL, Yang J, Cui XQ, Zhang XG, Zhao Y. Wu QJ, et al. Among authors: zhu jj. Zhonghua Yi Xue Za Zhi. 2010 Sep 21;90(35):2481-5. Zhonghua Yi Xue Za Zhi. 2010. PMID: 21092476 Clinical Trial. Chinese.

3

Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu W, Li X, Liu S, Xing Y, Zhang L, Li M, Zhang J. Liang F, et al. Among authors: zhu j. Appl Opt. 2017 May 10;56(14):4197-4200. doi: 10.1364/AO.56.004197. Appl Opt. 2017. PMID: 29047555

4

Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.

Liu W, Zhao D, Jiang D, Shi D, Zhu J, Liu Z, Chen P, Yang J, Liang F, Liu S, Xing Y, Zhang L, Wang W, Li M, Zhang Y, Du G. Liu W, et al. Among authors: zhu j. Opt Express. 2018 Feb 5;26(3):3427-3434. doi: 10.1364/OE.26.003427. Opt Express. 2018. PMID: 29401870 Free article.

5

Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells.

Peng L, Zhao D, Jiang D, Zhu J, Liu Z, Chen P, Yang J, Liu W, Liang F, Xing Y, Liu S, Zhang L, Wang W, Li M, Zhang Y, Du G. Peng L, et al. Among authors: zhu j. Opt Express. 2018 Aug 20;26(17):21736-21744. doi: 10.1364/OE.26.021736. Opt Express. 2018. PMID: 30130875 Free article.

6

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, Li M, Zhang Y, Du G. Liang F, et al. Among authors: zhu j. Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744. Nanomaterials (Basel). 2018. PMID: 30235861 Free PMC article.

7

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.

Xing Y, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liang F, Liu S, Zhang L. Xing Y, et al. Among authors: zhu j. Nanoscale Res Lett. 2019 Mar 12;14(1):88. doi: 10.1186/s11671-019-2919-9. Nanoscale Res Lett. 2019. PMID: 30874975 Free PMC article.

8

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process.

Liu S, Yang J, Zhao D, Jiang D, Zhu J, Liang F, Chen P, Liu Z, Xing Y, Peng L, Zhang L. Liu S, et al. Among authors: zhu j. Nanoscale Res Lett. 2019 Aug 16;14(1):280. doi: 10.1186/s11671-019-3095-7. Nanoscale Res Lett. 2019. PMID: 31420760 Free PMC article.

9

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.

Zhang Y, Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Yang J, Liu S. Zhang Y, et al. Among authors: zhu j. Nanoscale Res Lett. 2020 Feb 10;15(1):38. doi: 10.1186/s11671-020-3263-9. Nanoscale Res Lett. 2020. PMID: 32040646 Free PMC article.

10

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness.

Wang X, Liang F, Zhao D, Liu Z, Zhu J, Yang J. Wang X, et al. Among authors: zhu j. Nanoscale Res Lett. 2020 Oct 1;15(1):191. doi: 10.1186/s11671-020-03420-y. Nanoscale Res Lett. 2020. PMID: 33001341 Free PMC article.

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