Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Shuangtao Liu; Yao Xing; Liqun Zhang; Mo Li; Yuantao Zhang; Guotong Du

doi:10.3390/nano8090744

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744.

Authors

Feng Liang¹, Degang Zhao^{2

3}, Desheng Jiang⁴, Zongshun Liu⁵, Jianjun Zhu⁶, Ping Chen⁷, Jing Yang⁸, Shuangtao Liu⁹, Yao Xing¹⁰, Liqun Zhang¹¹, Mo Li¹², Yuantao Zhang¹³, Guotong Du¹⁴

Affiliations

¹ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. liangfeng13@semi.ac.cn.
² State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. dgzhao@red.semi.ac.cn.
³ University of Chinese Academy of Sciences, Beijing 100049, China. dgzhao@red.semi.ac.cn.
⁴ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. dsjiang@semi.ac.cn.
⁵ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. zsliu@semi.ac.cn.
⁶ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. jjzhu@semi.ac.cn.
⁷ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. pchen@semi.ac.cn.
⁸ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. yangjing333@semi.ac.cn.
⁹ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. lst7713@semi.ac.cn.
¹⁰ State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. xingyao@semi.ac.cn.
¹¹ Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China. lqzhang2012@sinano.ac.cn.
¹² Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China. limo@mtrc.ac.cn.
¹³ State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China. zhangyt@jlu.edu.cn.
¹⁴ State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China. dugt@jlu.edu.cn.

Abstract

Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) are investigated. It is observed from the room temperature (RT) photoluminescence (PL) measurements that the YL band is enhanced in the PL spectra of those samples if their MOCVD growth is carried out with a decrease of pressure, temperature, or flow rate of NH₃. Furthermore, a strong dependence of YL band intensity on the carbon concentration is found by secondary ion mass spectroscopy (SIMS) measurements, demonstrating that the increased carbon-related defects in these samples are responsible for the enhancement of the YL band.

Keywords: carbon impurity; unintentionally doped GaN; yellow luminescence band.

Abstract

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