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Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes.
Wang Q, Li N, Tang J, Zhu J, Zhang Q, Jia Q, Lu Y, Wei Z, Yu H, Zhao Y, Guo Y, Gu L, Sun G, Yang W, Yang R, Shi D, Zhang G. Wang Q, et al. Among authors: zhao y. Nano Lett. 2020 Oct 14;20(10):7193-7199. doi: 10.1021/acs.nanolett.0c02531. Epub 2020 Sep 1. Nano Lett. 2020. PMID: 32833463
Employing defected monolayer MoS2 as charge storage materials.
Meng JL, Wei Z, Tang J, Zhao Y, Wang Q, Tian J, Yang R, Zhang G, Shi D. Meng JL, et al. Among authors: zhao y. Nanotechnology. 2020 Mar 20;31(23):235710. doi: 10.1088/1361-6528/ab7c47. Epub 2020 Mar 3. Nanotechnology. 2020. PMID: 32126546
In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.
Tang J, Wei Z, Wang Q, Wang Y, Han B, Li X, Huang B, Liao M, Liu J, Li N, Zhao Y, Shen C, Guo Y, Bai X, Gao P, Yang W, Chen L, Wu K, Yang R, Shi D, Zhang G. Tang J, et al. Among authors: zhao y. Small. 2020 Oct;16(42):e2004276. doi: 10.1002/smll.202004276. Epub 2020 Sep 17. Small. 2020. PMID: 32939960
Layer-by-layer epitaxy of multi-layer MoS2 wafers.
Wang Q, Tang J, Li X, Tian J, Liang J, Li N, Ji D, Xian L, Guo Y, Li L, Zhang Q, Chu Y, Wei Z, Zhao Y, Du L, Yu H, Bai X, Gu L, Liu K, Yang W, Yang R, Shi D, Zhang G. Wang Q, et al. Among authors: zhao y. Natl Sci Rev. 2022 Apr 21;9(6):nwac077. doi: 10.1093/nsr/nwac077. eCollection 2022 Jun. Natl Sci Rev. 2022. PMID: 35769232 Free PMC article.
Low power flexible monolayer MoS2 integrated circuits.
Tang J, Wang Q, Tian J, Li X, Li N, Peng Y, Li X, Zhao Y, He C, Wu S, Li J, Guo Y, Huang B, Chu Y, Ji Y, Shang D, Du L, Yang R, Yang W, Bai X, Shi D, Zhang G. Tang J, et al. Among authors: zhao y. Nat Commun. 2023 Jun 19;14(1):3633. doi: 10.1038/s41467-023-39390-9. Nat Commun. 2023. PMID: 37336907 Free PMC article.
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