Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

Nano Lett. 2020 Oct 14;20(10):7193-7199. doi: 10.1021/acs.nanolett.0c02531. Epub 2020 Sep 1.

Abstract

Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS2 wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS2.

Keywords: high quality; large domain sizes; monolayer molybdenum disulfide; oriented; wafer-scale.