Zhang Y - Search Results

1

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing.

Chen Z, Zhu H, Wang G, Wang Q, Xiao Z, Zhang Y, Liu J, Lu S, Du Y, Yu J, Xiong W, Kong Z, Du A, Yan Z, Zheng Y. Chen Z, et al. Among authors: zhang y. Nanomaterials (Basel). 2023 Jun 1;13(11):1786. doi: 10.3390/nano13111786. Nanomaterials (Basel). 2023. PMID: 37299689 Free PMC article.

2

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.

Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH. Li J, et al. Among authors: zhang q, zhang j, zhang y. Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771. Materials (Basel). 2020. PMID: 32046197 Free PMC article.

3

Strained Si_0.2Ge_0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium.

Xie L, Zhu H, Zhang Y, Ai X, Wang G, Li J, Du A, Kong Z, Yin X, Li C, Zhao L, Li Y, Jia K, Li B, Radamson HH. Xie L, et al. Among authors: zhang y. Nanomaterials (Basel). 2020 Aug 29;10(9):1715. doi: 10.3390/nano10091715. Nanomaterials (Basel). 2020. PMID: 32872556 Free PMC article.

4

Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric Acids.

Li C, Zhu H, Zhang Y, Yin X, Jia K, Li J, Wang G, Kong Z, Du A, Yang T, Zhao L, Huang W, Xie L, Li Y, Ai X, Ma S, Radamson HH. Li C, et al. Among authors: zhang y. ACS Appl Mater Interfaces. 2020 Oct 21;12(42):48170-48178. doi: 10.1021/acsami.0c14018. Epub 2020 Oct 9. ACS Appl Mater Interfaces. 2020. PMID: 32970945

5

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon-Germanium Multilayers Structures for Vertical Transistors Application.

Li C, Lin H, Li J, Yin X, Zhang Y, Kong Z, Wang G, Zhu H, Radamson HH. Li C, et al. Among authors: zhang y. Nanoscale Res Lett. 2020 Dec 9;15(1):225. doi: 10.1186/s11671-020-03456-0. Nanoscale Res Lett. 2020. PMID: 33296038 Free PMC article.

6

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs.

Gu J, Zhang Q, Wu Z, Yao J, Zhang Z, Zhu X, Wang G, Li J, Zhang Y, Cai Y, Xu R, Xu G, Xu Q, Yin H, Luo J, Wang W, Ye T. Gu J, et al. Among authors: zhang q, zhang z, zhang y. Nanomaterials (Basel). 2021 Jan 26;11(2):309. doi: 10.3390/nano11020309. Nanomaterials (Basel). 2021. PMID: 33530292 Free PMC article.

7

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Li C, Zhu H, Zhang Y, Wang Q, Yin X, Li J, Wang G, Kong Z, Ai X, Xie L, Liu Y, Li Y, Huang W, Yan Z, Xiao Z, Radamson HH, Li J, Wang W. Li C, et al. Among authors: zhang y. Nano Lett. 2021 Jun 9;21(11):4730-4737. doi: 10.1021/acs.nanolett.1c01033. Epub 2021 May 26. Nano Lett. 2021. PMID: 34038143

8

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric Acids.

Li Y, Zhu H, Kong Z, Zhang Y, Ai X, Wang G, Wang Q, Liu Z, Lu S, Xie L, Huang W, Liu Y, Li C, Li J, Lin H, Su J, Zeng C, Radamson HH. Li Y, et al. Among authors: zhang y. Nanomaterials (Basel). 2021 May 3;11(5):1209. doi: 10.3390/nano11051209. Nanomaterials (Basel). 2021. PMID: 34063569 Free PMC article.

9

Investigation on Ge_0.8Si_0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice.

Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Du A, Kong Z, Wang Q, Lu S, Li C, Li Y, Huang W, Radamson HH. Xie L, et al. Among authors: zhang y. Nanomaterials (Basel). 2021 May 26;11(6):1408. doi: 10.3390/nano11061408. Nanomaterials (Basel). 2021. PMID: 34073548 Free PMC article.

10

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors.

Zhang Z, Luo Y, Cui Y, Yang H, Zhang Q, Xu G, Wu Z, Xiang J, Liu Q, Yin H, Mao S, Wang X, Li J, Zhang Y, Luo Q, Gao J, Xiong W, Liu J, Li Y, Li J, Luo J, Wang W. Zhang Z, et al. Among authors: zhang q, zhang y. ACS Appl Mater Interfaces. 2022 Feb 9;14(5):6967-6976. doi: 10.1021/acsami.1c20189. Epub 2022 Jan 25. ACS Appl Mater Interfaces. 2022. PMID: 35076195

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