A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Junjie Li; Yongliang Li; Na Zhou; Guilei Wang; Qingzhu Zhang; Anyan Du; Yongkui Zhang; Jianfeng Gao; Zhenzhen Kong; Hongxiao Lin; Jinjuan Xiang; Chen Li; Xiaogen Yin; Yangyang Li; Xiaolei Wang; Hong Yang; Xueli Ma; Jianghao Han; Jing Zhang; Tairan Hu; Tao Yang; Junfeng Li; Huaxiang Yin; Huilong Zhu; Wenwu Wang; Henry H Radamson

doi:10.3390/ma13030771

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771.

Authors

Junjie Li^{1

2}, Yongliang Li¹, Na Zhou¹, Guilei Wang^{1

2}, Qingzhu Zhang^{1

3}, Anyan Du¹, Yongkui Zhang¹, Jianfeng Gao¹, Zhenzhen Kong¹, Hongxiao Lin¹, Jinjuan Xiang¹, Chen Li^{1

2}, Xiaogen Yin^{1

2}, Yangyang Li^{1

2}, Xiaolei Wang¹, Hong Yang¹, Xueli Ma¹, Jianghao Han¹, Jing Zhang⁴, Tairan Hu⁴, Tao Yang¹, Junfeng Li¹, Huaxiang Yin^{1

2}, Huilong Zhu^{1

2}, Wenwu Wang^{1

2}, Henry H Radamson^{1

2

5}

Affiliations

¹ Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
² Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
³ State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China.
⁴ College of Electronic and Information Engineering, North China University of Technology, Beijing 100144, China.
⁵ Department of Electronics Design, Mid Sweden University, Holmgatan 10, 85170 Sundsvall, Sweden.

Abstract

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

Keywords: SiGe; atomic layer etching; field effect transistor; nano device; sensor material; vertical nanopillar.

Abstract

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