Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.
Tsykaniuk BI, Nikolenko AS, Strelchuk VV, Naseka VM, Mazur YI, Ware ME, DeCuir EA Jr, Sadovyi B, Weyher JL, Jakiela R, Salamo GJ, Belyaev AE.
Tsykaniuk BI, et al. Among authors: weyher jl.
Nanoscale Res Lett. 2017 Aug 21;12(1):502. doi: 10.1186/s11671-017-2227-1.
Nanoscale Res Lett. 2017.
PMID: 28828578
Free PMC article.
No abstract available.