Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Affiliations

• ¹ V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine. btsykaniuk@gmail.com.
• ² V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine.
• ³ Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
• ⁴ Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142, Warsaw, Poland.
• ⁵ Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668, Warsaw, Poland.