Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.
Fatahilah MF, Yu F, Strempel K, Römer F, Maradan D, Meneghini M, Bakin A, Hohls F, Schumacher HW, Witzigmann B, Waag A, Wasisto HS.
Fatahilah MF, et al. Among authors: wasisto hs.
Sci Rep. 2019 Jul 16;9(1):10301. doi: 10.1038/s41598-019-46186-9.
Sci Rep. 2019.
PMID: 31311946
Free PMC article.