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Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.
Lin Z, Si M, Askarpour V, Niu C, Charnas A, Shang Z, Zhang Y, Hu Y, Zhang Z, Liao PY, Cho K, Wang H, Lundstrom M, Maassen J, Ye PD. Lin Z, et al. Among authors: wang h. ACS Nano. 2022 Dec 27;16(12):21536-21545. doi: 10.1021/acsnano.2c10383. Epub 2022 Nov 29. ACS Nano. 2022. PMID: 36446079
Dual Beam In Situ Radiation Studies of Nanocrystalline Cu.
Fan C, Shang Z, Niu T, Li J, Wang H, Zhang X. Fan C, et al. Among authors: wang h. Materials (Basel). 2019 Aug 25;12(17):2721. doi: 10.3390/ma12172721. Materials (Basel). 2019. PMID: 31450669 Free PMC article.
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors.
Si M, Hu Y, Lin Z, Sun X, Charnas A, Zheng D, Lyu X, Wang H, Cho K, Ye PD. Si M, et al. Among authors: wang h. Nano Lett. 2021 Jan 13;21(1):500-506. doi: 10.1021/acs.nanolett.0c03967. Epub 2020 Dec 29. Nano Lett. 2021. PMID: 33372788
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