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Wide-gap semiconducting graphene from nitrogen-seeded SiC.
Wang F, Liu G, Rothwell S, Nevius M, Tejeda A, Taleb-Ibrahimi A, Feldman LC, Cohen PI, Conrad EH. Wang F, et al. Nano Lett. 2013 Oct 9;13(10):4827-32. doi: 10.1021/nl402544n. Epub 2013 Sep 23. Nano Lett. 2013. PMID: 24060338
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures.
Yoon Y, Zhang Z, Qi R, Joe AY, Sailus R, Watanabe K, Taniguchi T, Tongay S, Wang F. Yoon Y, et al. Among authors: wang f. Nano Lett. 2022 Dec 28;22(24):10140-10146. doi: 10.1021/acs.nanolett.2c04030. Epub 2022 Dec 9. Nano Lett. 2022. PMID: 36485010
Magnetic Field-Stabilized Wigner Crystal States in a Graphene Moiré Superlattice.
Chen G, Zhang YH, Sharpe A, Zhang Z, Wang S, Jiang L, Lyu B, Li H, Watanabe K, Taniguchi T, Shi Z, Goldhaber-Gordon D, Zhang Y, Wang F. Chen G, et al. Among authors: wang f, wang s. Nano Lett. 2023 Aug 9;23(15):7023-7028. doi: 10.1021/acs.nanolett.3c01741. Epub 2023 Jul 20. Nano Lett. 2023. PMID: 37474137
Low Resistance Contact to P-Type Monolayer WSe2.
Xie J, Zhang Z, Zhang H, Nagarajan V, Zhao W, Kim HL, Sanborn C, Qi R, Chen S, Kahn S, Watanabe K, Taniguchi T, Zettl A, Crommie MF, Analytis J, Wang F. Xie J, et al. Among authors: wang f. Nano Lett. 2024 May 7. doi: 10.1021/acs.nanolett.3c04195. Online ahead of print. Nano Lett. 2024. PMID: 38712885
The bottom-up growth of edge specific graphene nanoribbons.
Nevius MS, Wang F, Mathieu C, Barrett N, Sala A, Menteş TO, Locatelli A, Conrad EH. Nevius MS, et al. Among authors: wang f. Nano Lett. 2014 Nov 12;14(11):6080-6. doi: 10.1021/nl502942z. Epub 2014 Oct 6. Nano Lett. 2014. PMID: 25254434
Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase.
Conrad M, Wang F, Nevius M, Jinkins K, Celis A, Narayanan Nair M, Taleb-Ibrahimi A, Tejeda A, Garreau Y, Vlad A, Coati A, Miceli PF, Conrad EH. Conrad M, et al. Among authors: wang f. Nano Lett. 2017 Jan 11;17(1):341-347. doi: 10.1021/acs.nanolett.6b04196. Epub 2016 Dec 21. Nano Lett. 2017. PMID: 27981850
Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device.
Zhang S, Wang R, Wang X, Wei B, Chen B, Wang H, Shi G, Wang F, Jia B, Ouyang Y, Xie F, Fei F, Zhang M, Wang X, Wu D, Wan X, Song F, Zhang H, Wang B. Zhang S, et al. Among authors: wang x, wang h, wang f, wang r, wang b. Nano Lett. 2020 Jan 8;20(1):709-714. doi: 10.1021/acs.nanolett.9b04555. Epub 2019 Dec 17. Nano Lett. 2020. PMID: 31838853
Semiconducting Graphene from Highly Ordered Substrate Interactions.
Nevius MS, Conrad M, Wang F, Celis A, Nair MN, Taleb-Ibrahimi A, Tejeda A, Conrad EH. Nevius MS, et al. Among authors: wang f. Phys Rev Lett. 2015 Sep 25;115(13):136802. doi: 10.1103/PhysRevLett.115.136802. Epub 2015 Sep 21. Phys Rev Lett. 2015. PMID: 26451574
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