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Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theory.
ACS Appl Mater Interfaces. 2014 Apr 9;6(7):5056-60. doi: 10.1021/am500137y. Epub 2014 Mar 21.
ACS Appl Mater Interfaces. 2014.
PMID: 24625458
Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.
Niu G, Calka P, Auf der Maur M, Santoni F, Guha S, Fraschke M, Hamoumou P, Gautier B, Perez E, Walczyk C, Wenger C, Di Carlo A, Alff L, Schroeder T.
Niu G, et al. Among authors: walczyk c.
Sci Rep. 2016 May 16;6:25757. doi: 10.1038/srep25757.
Sci Rep. 2016.
PMID: 27181525
Free PMC article.
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Improving the Accuracy of the Fast Inverse Square Root by Modifying Newton-Raphson Corrections.
Walczyk CJ, Moroz LV, Cieśliński JL.
Walczyk CJ, et al.
Entropy (Basel). 2021 Jan 9;23(1):86. doi: 10.3390/e23010086.
Entropy (Basel). 2021.
PMID: 33435352
Free PMC article.
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