A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
Senanayak SP, Abdi-Jalebi M, Kamboj VS, Carey R, Shivanna R, Tian T, Schweicher G, Wang J, Giesbrecht N, Di Nuzzo D, Beere HE, Docampo P, Ritchie DA, Fairen-Jimenez D, Friend RH, Sirringhaus H.
Senanayak SP, et al. Among authors: tian t.
Sci Adv. 2020 Apr 10;6(15):eaaz4948. doi: 10.1126/sciadv.aaz4948. eCollection 2020 Apr.
Sci Adv. 2020.
PMID: 32300658
Free PMC article.