A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Satyaprasad P Senanayak; Mojtaba Abdi-Jalebi; Varun S Kamboj; Remington Carey; Ravichandran Shivanna; Tian Tian; Guillaume Schweicher; Junzhan Wang; Nadja Giesbrecht; Daniele Di Nuzzo; Harvey E Beere; Pablo Docampo; David A Ritchie; David Fairen-Jimenez; Richard H Friend; Henning Sirringhaus

doi:10.1126/sciadv.aaz4948

A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Sci Adv. 2020 Apr 10;6(15):eaaz4948. doi: 10.1126/sciadv.aaz4948. eCollection 2020 Apr.

Authors

Satyaprasad P Senanayak^{1

2}, Mojtaba Abdi-Jalebi^{1

3}, Varun S Kamboj¹, Remington Carey¹, Ravichandran Shivanna¹, Tian Tian^{4

5}, Guillaume Schweicher¹, Junzhan Wang¹, Nadja Giesbrecht⁶, Daniele Di Nuzzo¹, Harvey E Beere¹, Pablo Docampo^{6

7}, David A Ritchie^{1

8}, David Fairen-Jimenez⁴, Richard H Friend¹, Henning Sirringhaus¹

Affiliations

¹ Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK.
² CSIR- Institute of Minerals and Materials Technology Council of Scientific & Industrial Research, Bhubaneswar-751 013, Odisha, India.
³ Institute for Materials Discovery, University College London, Torrington Place, London WC1E 7JE, UK.
⁴ Adsorption and Advanced Materials (AAM) Laboratory, Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, UK.
⁵ Department of Chemical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ, UK.
⁶ Department Chemie, Ludwig-Maximilians-Universität-München, Butenandtstr, München, Germany.
⁷ School of Mathematics, Statistics and Physics, Newcastle University, Herschel Building, Newcastle upon Tyne NE1 7RU, UK.
⁸ Department of Physics, Swansea University, Sketty, Swansea SA2 8PQ, UK.

Abstract

Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔV_t < 2 V over 10 hours of continuous operation), and high mobility values >1 cm²/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.

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