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Ultralow-power in-memory computing based on ferroelectric memcapacitor network.
Tian B, Xie Z, Chen L, Hao S, Liu Y, Feng G, Liu X, Liu H, Yang J, Zhang Y, Bai W, Lin T, Shen H, Meng X, Zhong N, Peng H, Yue F, Tang X, Wang J, Zhu Q, Ivry Y, Dkhil B, Chu J, Duan C. Tian B, et al. Exploration (Beijing). 2023 May 11;3(3):20220126. doi: 10.1002/EXP.20220126. eCollection 2023 Jun. Exploration (Beijing). 2023. PMID: 37933380 Free PMC article.
Tunnel electroresistance through organic ferroelectrics.
Tian BB, Wang JL, Fusil S, Liu Y, Zhao XL, Sun S, Shen H, Lin T, Sun JL, Duan CG, Bibes M, Barthélémy A, Dkhil B, Garcia V, Meng XJ, Chu JH. Tian BB, et al. Nat Commun. 2016 May 4;7:11502. doi: 10.1038/ncomms11502. Nat Commun. 2016. PMID: 27143121 Free PMC article.
Interfacial memristors in Al-LaNiO3 heterostructures.
Tian B, Nukala P, Hassine MB, Zhao X, Wang X, Shen H, Wang J, Sun S, Lin T, Sun J, Ge J, Huang R, Duan C, Reiss T, Varela M, Dkhil B, Meng X, Chu J. Tian B, et al. Phys Chem Chem Phys. 2017 Jul 5;19(26):16960-16968. doi: 10.1039/c7cp02398g. Phys Chem Chem Phys. 2017. PMID: 28636685
Graphene Dirac point tuned by ferroelectric polarization field.
Wang X, Chen Y, Wu G, Wang J, Tian B, Sun S, Shen H, Lin T, Hu W, Kang T, Tang M, Xiao Y, Sun J, Meng X, Chu J. Wang X, et al. Among authors: tian b. Nanotechnology. 2018 Apr 3;29(13):134002. doi: 10.1088/1361-6528/aaa852. Nanotechnology. 2018. PMID: 29339566
Solid-State Synapse Based on Magnetoelectrically Coupled Memristor.
Huang W, Fang YW, Yin Y, Tian B, Zhao W, Hou C, Ma C, Li Q, Tsymbal EY, Duan CG, Li X. Huang W, et al. Among authors: tian b. ACS Appl Mater Interfaces. 2018 Feb 14;10(6):5649-5656. doi: 10.1021/acsami.7b18206. Epub 2018 Feb 5. ACS Appl Mater Interfaces. 2018. PMID: 29368507
2,670 results