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Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers.
Materials (Basel). 2023 Nov 27;16(23):7386. doi: 10.3390/ma16237386.
Materials (Basel). 2023.
PMID: 38068130
Free PMC article.
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.
Sarzyński M, Grzanka E, Grzanka S, Targowski G, Czernecki R, Reszka A, Holy V, Nitta S, Liu Z, Amano H, Leszczyński M.
Sarzyński M, et al. Among authors: targowski g.
Materials (Basel). 2019 Aug 14;12(16):2583. doi: 10.3390/ma12162583.
Materials (Basel). 2019.
PMID: 31416124
Free PMC article.
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Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.
Kafar A, Stanczyk S, Sarzynski M, Grzanka S, Goss J, Targowski G, Nowakowska-Siwinska A, Suski T, Perlin P.
Kafar A, et al. Among authors: targowski g.
Opt Express. 2016 May 2;24(9):9673-82. doi: 10.1364/OE.24.009673.
Opt Express. 2016.
PMID: 27137581
Free article.
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Visible light communications using a directly modulated 422 nm GaN laser diode.
Watson S, Tan M, Najda SP, Perlin P, Leszczynski M, Targowski G, Grzanka S, Kelly AE.
Watson S, et al. Among authors: targowski g.
Opt Lett. 2013 Oct 1;38(19):3792-4. doi: 10.1364/OL.38.003792.
Opt Lett. 2013.
PMID: 24081054
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