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Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model.
PLoS One. 2022 Mar 3;17(3):e0264483. doi: 10.1371/journal.pone.0264483. eCollection 2022.
PLoS One. 2022.
PMID: 35239699
Free PMC article.
Analytical modeling of glucose biosensors based on carbon nanotubes.
Pourasl AH, Ahmadi MT, Rahmani M, Chin HC, Lim CS, Ismail R, Tan ML.
Pourasl AH, et al.
Nanoscale Res Lett. 2014 Jan 15;9(1):33. doi: 10.1186/1556-276X-9-33.
Nanoscale Res Lett. 2014.
PMID: 24428818
Free PMC article.
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Metal oxide-graphene field-effect transistor: interface trap density extraction model.
Najam F, Lau KC, Lim CS, Yu YS, Tan ML.
Najam F, et al.
Beilstein J Nanotechnol. 2016 Sep 30;7:1368-1376. doi: 10.3762/bjnano.7.128. eCollection 2016.
Beilstein J Nanotechnol. 2016.
PMID: 27826511
Free PMC article.
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Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.
Chuan MW, Wong KL, Riyadi MA, Hamzah A, Rusli S, Alias NE, Lim CS, Tan MLP.
Chuan MW, et al. Among authors: tan mlp.
PLoS One. 2021 Jun 14;16(6):e0253289. doi: 10.1371/journal.pone.0253289. eCollection 2021.
PLoS One. 2021.
PMID: 34125874
Free PMC article.
Item in Clipboard
Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors.
Chin HC, Hamzah A, Alias NE, Tan MLP.
Chin HC, et al. Among authors: tan mlp.
Micromachines (Basel). 2023 Jun 12;14(6):1235. doi: 10.3390/mi14061235.
Micromachines (Basel). 2023.
PMID: 37374820
Free PMC article.
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Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.
Tan ML, Lentaris G, Amaratunga Aj G.
Tan ML, et al.
Nanoscale Res Lett. 2012 Aug 19;7(1):467. doi: 10.1186/1556-276X-7-467.
Nanoscale Res Lett. 2012.
PMID: 22901374
Free PMC article.
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