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Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.
Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM. Chen PH, et al. Among authors: sze sm. ACS Appl Mater Interfaces. 2017 Jan 25;9(3):3149-3155. doi: 10.1021/acsami.6b14282. Epub 2017 Jan 10. ACS Appl Mater Interfaces. 2017. PMID: 28072511
Physical and chemical mechanisms in oxide-based resistance random access memory.
Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM. Chang KC, et al. Among authors: sze sm. Nanoscale Res Lett. 2015 Mar 12;10:120. doi: 10.1186/s11671-015-0740-7. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25873842 Free PMC article.
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