Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Kai-Jhih Gan; Po-Tsun Liu; Ta-Chun Chien; Dun-Bao Ruan; Simon M Sze

doi:10.1038/s41598-019-50816-7

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Sci Rep. 2019 Oct 2;9(1):14141. doi: 10.1038/s41598-019-50816-7.

Authors

Kai-Jhih Gan¹, Po-Tsun Liu², Ta-Chun Chien³, Dun-Bao Ruan¹, Simon M Sze¹

Affiliations

¹ Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan.
² Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan. ptliu@mail.nctu.edu.tw.
³ Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan.

Abstract

The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga₂O₃/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10⁵), low operation voltage, high endurance (>1.4 × 10² cycles), and large retention memory window (>10⁵). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga₂O₃ layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.