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Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.
Sci Rep. 2021 Oct 12;11(1):20579. doi: 10.1038/s41598-021-99821-9.
Sci Rep. 2021.
PMID: 34642419
Free PMC article.
No abstract available.
A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.
Mohammadi V, Nihtianov S, Fang C.
Mohammadi V, et al. Among authors: nihtianov s.
Sci Rep. 2017 Oct 16;7(1):13247. doi: 10.1038/s41598-017-13100-0.
Sci Rep. 2017.
PMID: 29038490
Free PMC article.
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