Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
Sci Rep
.
2021 Oct 12;11(1):20579.
doi: 10.1038/s41598-021-99821-9.
Authors
Vahid Mohammadi
1
,
Stoyan Nihtianov
2
,
Changming Fang
3
Affiliations
1
Department of Microelectronics, Delft University of Technology, 2628 CD, Delft, The Netherlands. V.Mohammadi@tudelft.nl.
2
Department of Microelectronics, Delft University of Technology, 2628 CD, Delft, The Netherlands.
3
Brunel Centre for Advanced Solidification Technology (BCAST), Brunel University London, Uxbridge, Middlesex, UB8 3PH, UK.
PMID:
34642419
PMCID:
PMC8511194
DOI:
10.1038/s41598-021-99821-9
No abstract available
Publication types
Published Erratum