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sangyun park
(11 results)?
Controlling the number of layers in graphene using the growth pressure.
Nanotechnology. 2019 Jun 7;30(23):235602. doi: 10.1088/1361-6528/ab0847. Epub 2019 Feb 19.
Nanotechnology. 2019.
PMID: 30780133
Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.
Choi D, Poudel N, Park S, Akinwande D, Cronin SB, Watanabe K, Taniguchi T, Yao Z, Shi L.
Choi D, et al. Among authors: park s.
ACS Appl Mater Interfaces. 2018 Apr 4;10(13):11101-11107. doi: 10.1021/acsami.7b16634. Epub 2018 Mar 22.
ACS Appl Mater Interfaces. 2018.
PMID: 29528211
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Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps.
Grubb PM, Subbaraman H, Park S, Akinwande D, Chen RT.
Grubb PM, et al. Among authors: park s.
Sci Rep. 2017 Apr 26;7(1):1202. doi: 10.1038/s41598-017-01391-2.
Sci Rep. 2017.
PMID: 28446781
Free PMC article.
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Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies.
Zhu W, Park S, Yogeesh MN, McNicholas KM, Bank SR, Akinwande D.
Zhu W, et al. Among authors: park s.
Nano Lett. 2016 Apr 13;16(4):2301-6. doi: 10.1021/acs.nanolett.5b04768. Epub 2016 Mar 18.
Nano Lett. 2016.
PMID: 26977902
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Dramatic vapor-phase modulation of the characteristics of graphene field-effect transistors.
Worley BC, Kim S, Park S, Rossky PJ, Akinwande D, Dodabalapur A.
Worley BC, et al. Among authors: park s.
Phys Chem Chem Phys. 2015 Jul 28;17(28):18426-30. doi: 10.1039/c5cp01888a.
Phys Chem Chem Phys. 2015.
PMID: 26107384
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Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors.
Rahimi S, Tao L, Chowdhury SF, Park S, Jouvray A, Buttress S, Rupesinghe N, Teo K, Akinwande D.
Rahimi S, et al. Among authors: park s.
ACS Nano. 2014 Oct 28;8(10):10471-9. doi: 10.1021/nn5038493. Epub 2014 Sep 15.
ACS Nano. 2014.
PMID: 25198884
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