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Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.
Nanoscale Res Lett. 2017 Dec;12(1):397. doi: 10.1186/s11671-017-2171-0. Epub 2017 Jun 8.
Nanoscale Res Lett. 2017.
PMID: 28599511
Free PMC article.
Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.
Tsykaniuk BI, Nikolenko AS, Strelchuk VV, Naseka VM, Mazur YI, Ware ME, DeCuir EA Jr, Sadovyi B, Weyher JL, Jakiela R, Salamo GJ, Belyaev AE.
Tsykaniuk BI, et al. Among authors: sadovyi b.
Nanoscale Res Lett. 2017 Aug 21;12(1):502. doi: 10.1186/s11671-017-2227-1.
Nanoscale Res Lett. 2017.
PMID: 28828578
Free PMC article.
No abstract available.
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Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN.
Piechota J, Krukowski S, Sadovyi P, Sadovyi B, Porowski S, Grzegory I.
Piechota J, et al. Among authors: sadovyi b.
Materials (Basel). 2021 Mar 9;14(5):1306. doi: 10.3390/ma14051306.
Materials (Basel). 2021.
PMID: 33803174
Free PMC article.
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