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Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory.
Nanotechnology. 2021 Jan 15;32(3):035203. doi: 10.1088/1361-6528/abbeab.
Nanotechnology. 2021.
PMID: 33022668
Highly durable and flexible gallium-based oxide conductive-bridging random access memory.
Gan KJ, Liu PT, Chien TC, Ruan DB, Sze SM.
Gan KJ, et al. Among authors: ruan db.
Sci Rep. 2019 Oct 2;9(1):14141. doi: 10.1038/s41598-019-50816-7.
Sci Rep. 2019.
PMID: 31578400
Free PMC article.
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Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film.
Hsu CC, Liu PT, Gan KJ, Ruan DB, Sze SM.
Hsu CC, et al. Among authors: ruan db.
Nanomaterials (Basel). 2021 Aug 27;11(9):2204. doi: 10.3390/nano11092204.
Nanomaterials (Basel). 2021.
PMID: 34578520
Free PMC article.
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Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer.
Ruan DB, Liu PT, Chiu YC, Kuo PY, Yu MC, Gan KJ, Chien TC, Sze SM.
Ruan DB, et al.
RSC Adv. 2018 Feb 12;8(13):6925-6930. doi: 10.1039/c7ra13193c. eCollection 2018 Feb 9.
RSC Adv. 2018.
PMID: 35540334
Free PMC article.
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Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture.
Liu PT, Ruan DB, Yeh XY, Chiu YC, Zheng GT, Sze SM.
Liu PT, et al. Among authors: ruan db.
Sci Rep. 2018 May 25;8(1):8153. doi: 10.1038/s41598-018-26580-5.
Sci Rep. 2018.
PMID: 29802363
Free PMC article.
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Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems.
Ruan DB, Liu PT, Yu MC, Chien TC, Chiu YC, Gan KJ, Sze SM.
Ruan DB, et al.
ACS Appl Mater Interfaces. 2019 Jun 26;11(25):22521-22530. doi: 10.1021/acsami.9b04257. Epub 2019 Jun 13.
ACS Appl Mater Interfaces. 2019.
PMID: 31190532
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