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Sidewall crystalline orientation effect of post-treatments for a replacement metal gate bulk fin field effect transistor.
ACS Appl Mater Interfaces. 2013 Sep 25;5(18):8865-8. doi: 10.1021/am403270m. Epub 2013 Sep 11.
ACS Appl Mater Interfaces. 2013.
PMID: 24007291
Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories.
Ramesh S, Ajaykumar A, Ragnarsson LÅ, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié JP, Van den Bosch G, Rosmeulen M.
Ramesh S, et al. Among authors: ragnarsson la.
Micromachines (Basel). 2021 Sep 8;12(9):1084. doi: 10.3390/mi12091084.
Micromachines (Basel). 2021.
PMID: 34577727
Free PMC article.
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