The crystalline orientation effect is investigated for post-treatments of a replacement metal gate (RMG) p-type bulk fin field effect transistor (FinFET). After post-deposition annealing (PDA) and SF6 plasma treatment, the hole mobility is improved. From low-frequency noise analysis, reduction of the trap density and noise level is observed in PDA- and SF6-plasma-treated devices. (100) sidewall-oriented FinFETs show a lower noise level because of fewer interface traps compared to (110) sidewall-oriented devices. SF6 plasma affects the interface traps, whereas PDA relatively more affects bulk oxide traps for RMG high-k last FinFET.