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Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors.
Sensors (Basel). 2020 Dec 2;20(23):6884. doi: 10.3390/s20236884.
Sensors (Basel). 2020.
PMID: 33276481
Free PMC article.
Study of Radiation-Induced Defects in p-Type Si1-xGex Diodes before and after Annealing.
Ceponis T, Lastovskii S, Makarenko L, Pavlov J, Pukas K, Gaubas E.
Ceponis T, et al. Among authors: pukas k.
Materials (Basel). 2020 Dec 12;13(24):5684. doi: 10.3390/ma13245684.
Materials (Basel). 2020.
PMID: 33322844
Free PMC article.
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5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1-xGex Alloys.
Pavlov J, Ceponis T, Pukas K, Makarenko L, Gaubas E.
Pavlov J, et al. Among authors: pukas k.
Materials (Basel). 2022 Mar 2;15(5):1861. doi: 10.3390/ma15051861.
Materials (Basel). 2022.
PMID: 35269092
Free PMC article.
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