Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

Tomas Ceponis; Laimonas Deveikis; Stanislau Lastovskii; Leonid Makarenko; Jevgenij Pavlov; Kornelijus Pukas; Vytautas Rumbauskas; Eugenijus Gaubas

doi:10.3390/s20236884

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

Sensors (Basel). 2020 Dec 2;20(23):6884. doi: 10.3390/s20236884.

Authors

Tomas Ceponis¹, Laimonas Deveikis¹, Stanislau Lastovskii², Leonid Makarenko³, Jevgenij Pavlov¹, Kornelijus Pukas¹, Vytautas Rumbauskas¹, Eugenijus Gaubas¹

Affiliations

¹ Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, Lithuania.
² Laboratory of Radiation Effects, Scientific-Practical Materials Research Centre of NAS of Belarus, P. Brovki Str. 17, 220072 Minsk, Belarus.
³ Department of Applied Mathematics and Computer Science, Belarusian State University, Independence Ave. 4, 220030 Minsk, Belarus.

Abstract

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si_1-xGe_x structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n⁺p structure.

Keywords: SiGe; electron and proton irradiations; microwave probed photoconductivity; pulsed barrier capacitance transients; radiation detectors; steady-state photo-ionization spectroscopy.

Grants and funding

S-LB-19-1/Lietuvos Mokslo Taryba