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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2012 | 1 |
2013 | 1 |
2015 | 1 |
2018 | 1 |
2023 | 1 |
2024 | 0 |
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5 results
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Page 1
Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots.
Nanomaterials (Basel). 2023 Apr 26;13(9):1475. doi: 10.3390/nano13091475.
Nanomaterials (Basel). 2023.
PMID: 37177020
Free PMC article.
Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.
Nishio K, Yayama T, Miyazaki T, Taoka N, Shimizu M.
Nishio K, et al. Among authors: taoka n.
Sci Rep. 2018 Jan 23;8(1):1391. doi: 10.1038/s41598-018-19283-4.
Sci Rep. 2018.
PMID: 29362443
Free PMC article.
Item in Clipboard
Growth and applications of GeSn-related group-IV semiconductor materials.
Zaima S, Nakatsuka O, Taoka N, Kurosawa M, Takeuchi W, Sakashita M.
Zaima S, et al. Among authors: taoka n.
Sci Technol Adv Mater. 2015 Jul 28;16(4):043502. doi: 10.1088/1468-6996/16/4/043502. eCollection 2015 Aug.
Sci Technol Adv Mater. 2015.
PMID: 27877818
Free PMC article.
Review.
Item in Clipboard
Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.
Kim Y, Yokoyama M, Taoka N, Takenaka M, Takagi S.
Kim Y, et al. Among authors: taoka n.
Opt Express. 2013 Aug 26;21(17):19615-23. doi: 10.1364/OE.21.019615.
Opt Express. 2013.
PMID: 24105508
Free article.
Item in Clipboard
Initial Processes of Atomic Layer Deposition of Al₂O₃ on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance.
Jevasuwan W, Urabe Y, Maeda T, Miyata N, Yasuda T, Yamada H, Hata M, Taoka N, Takenaka M, Takagi S.
Jevasuwan W, et al. Among authors: taoka n.
Materials (Basel). 2012 Mar 8;5(3):404-414. doi: 10.3390/ma5030404.
Materials (Basel). 2012.
PMID: 28817054
Free PMC article.
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