Growth and applications of GeSn-related group-IV semiconductor materials

Shigeaki Zaima; Osamu Nakatsuka; Noriyuki Taoka; Masashi Kurosawa; Wakana Takeuchi; Mitsuo Sakashita

doi:10.1088/1468-6996/16/4/043502

Growth and applications of GeSn-related group-IV semiconductor materials

Sci Technol Adv Mater. 2015 Jul 28;16(4):043502. doi: 10.1088/1468-6996/16/4/043502. eCollection 2015 Aug.

Authors

Shigeaki Zaima¹, Osamu Nakatsuka², Noriyuki Taoka³, Masashi Kurosawa⁴, Wakana Takeuchi², Mitsuo Sakashita²

Affiliations

¹ EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan; Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
² Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
³ Innovations for High Performance Microelectronics (IHP), Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany.
⁴ EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan; Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan; Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan.

Abstract

We review the technology of Ge_1-x Sn _x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge_1-x Sn _x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge_1-x Sn _x -related material thin films and the studies of the electronic properties of thin films, metals/Ge_1-x Sn _x , and insulators/Ge_1-x Sn _x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge_1-x Sn _x -related materials, as well as the reported performances of electronic devices using Ge_1-x Sn _x related materials.

Keywords: crystal growth; energy band engineering; epitaxy; germanium tin; group-IV semiconductor; interface; thin film.

Publication types

Review