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Growth and applications of GeSn-related group-IV semiconductor materials.
Sci Technol Adv Mater. 2015 Jul 28;16(4):043502. doi: 10.1088/1468-6996/16/4/043502. eCollection 2015 Aug.
Sci Technol Adv Mater. 2015.
PMID: 27877818
Free PMC article.
Review.
Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation.
Peng Y, Miao L, Gao J, Liu C, Kurosawa M, Nakatsuka O, Zaima S.
Peng Y, et al. Among authors: nakatsuka o.
Sci Rep. 2019 Oct 4;9(1):14342. doi: 10.1038/s41598-019-50754-4.
Sci Rep. 2019.
PMID: 31586102
Free PMC article.
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Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi Epilayers grown on Ge(111).
Hamaya K, Itoh H, Nakatsuka O, Ueda K, Yamamoto K, Itakura M, Taniyama T, Ono T, Miyao M.
Hamaya K, et al. Among authors: nakatsuka o.
Phys Rev Lett. 2009 Apr 3;102(13):137204. doi: 10.1103/PhysRevLett.102.137204. Epub 2009 Apr 1.
Phys Rev Lett. 2009.
PMID: 19392400
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