Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.
Liu X, Ang KW, Yu W, He J, Feng X, Liu Q, Jiang H, Dan Tang, Wen J, Lu Y, Liu W, Cao P, Han S, Wu J, Liu W, Wang X, Zhu D, He Z.
Liu X, et al. Among authors: liu q, liu w.
Sci Rep. 2016 Apr 22;6:24920. doi: 10.1038/srep24920.
Sci Rep. 2016.
PMID: 27102711
Free PMC article.