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Negative Magnetoresistivity in Highly Doped n-Type GaN.
Konczewicz L, Iwinska M, Litwin-Staszewska E, Zajac M, Turski H, Bockowski M, Schiavon D, Chlipała M, Juillaguet S, Contreras S. Konczewicz L, et al. Among authors: litwin staszewska e. Materials (Basel). 2022 Oct 11;15(20):7069. doi: 10.3390/ma15207069. Materials (Basel). 2022. PMID: 36295135 Free PMC article.
Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium.
Schiavon D, Litwin-Staszewska E, Jakieła R, Grzanka S, Perlin P. Schiavon D, et al. Among authors: litwin staszewska e. Materials (Basel). 2021 Jan 13;14(2):354. doi: 10.3390/ma14020354. Materials (Basel). 2021. PMID: 33450822 Free PMC article.
Weak antilocalization and spin precession in quantum wells.
Knap W, Skierbiszewski C, Zduniak A, Litwin-Staszewska E, Bertho D, Kobbi F, Robert JL, Pikus GE, Pikus FG, Iordanskii SV, Mosser V V, Zekentes K, Lyanda-Geller YB. Knap W, et al. Among authors: litwin staszewska e. Phys Rev B Condens Matter. 1996 Feb 15;53(7):3912-3924. doi: 10.1103/physrevb.53.3912. Phys Rev B Condens Matter. 1996. PMID: 9983944 No abstract available.
High pressure and DX centers in heavily doped bulk GaAs.
Suski T, Piotrzkowski R, Wisniewski P, Litwin-Staszewska E, Dmowski L. Suski T, et al. Among authors: litwin staszewska e. Phys Rev B Condens Matter. 1989 Aug 15;40(6):4012-4021. doi: 10.1103/physrevb.40.4012. Phys Rev B Condens Matter. 1989. PMID: 9992375 No abstract available.
Pressure study of metastability in Ga1-xAlxAs/GaAs:Si heterojunctions.
Piotrzkowski R, Robert JL, Litwin-Staszewska E, Andre JP. Piotrzkowski R, et al. Among authors: litwin staszewska e. Phys Rev B Condens Matter. 1988 Jan 15;37(2):1031-1034. doi: 10.1103/physrevb.37.1031. Phys Rev B Condens Matter. 1988. PMID: 9944606 No abstract available.