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A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH. Li J, et al. Among authors: li c, li y. Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771. Materials (Basel). 2020. PMID: 32046197 Free PMC article.
Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.
Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Liu J, Du A, Yang H, Yin X, Huang W, Li C, Li Y, Wang Q, Lu S, Kong Z, Xiang J, Du Y, Luo J, Li J, Radamson HH, Wang W, Ye T. Xie L, et al. Among authors: li c, li y, li j. ACS Nano. 2023 Nov 28;17(22):22259-22267. doi: 10.1021/acsnano.3c02518. Epub 2023 Oct 12. ACS Nano. 2023. PMID: 37823534
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Cao Z, Yang T, Li J, Yin H, Zhu H, Luo J, Wang W, Radamson HH. Li J, et al. Among authors: li c, li y. Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793. Nanomaterials (Basel). 2020. PMID: 32326106 Free PMC article.
Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric Acids.
Li C, Zhu H, Zhang Y, Yin X, Jia K, Li J, Wang G, Kong Z, Du A, Yang T, Zhao L, Huang W, Xie L, Li Y, Ai X, Ma S, Radamson HH. Li C, et al. Among authors: li y, li j. ACS Appl Mater Interfaces. 2020 Oct 21;12(42):48170-48178. doi: 10.1021/acsami.0c14018. Epub 2020 Oct 9. ACS Appl Mater Interfaces. 2020. PMID: 32970945
Hidden hotspots of amphibian biodiversity in China.
Xu W, Wu YH, Zhou WW, Chen HM, Zhang BL, Chen JM, Xu W, Rao DQ, Zhao H, Yan F, Yuan Z, Jiang K, Jin JQ, Hou M, Zou D, Wang LJ, Zheng Y, Li JT, Jiang J, Zeng XM, Chen Y, Liao ZY, Li C, Li XY, Gao W, Wang K, Zhang DR, Lu C, Yin T, Ding Z, Zhao GG, Chai J, Zhao WG, Zhang YP, Wiens JJ, Che J. Xu W, et al. Among authors: li c. Proc Natl Acad Sci U S A. 2024 May 14;121(20):e2320674121. doi: 10.1073/pnas.2320674121. Epub 2024 Apr 29. Proc Natl Acad Sci U S A. 2024. PMID: 38684007
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