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Study of Radiation-Induced Defects in p-Type Si1-xGex Diodes before and after Annealing.
Materials (Basel). 2020 Dec 12;13(24):5684. doi: 10.3390/ma13245684.
Materials (Basel). 2020.
PMID: 33322844
Free PMC article.
Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors.
Ceponis T, Deveikis L, Lastovskii S, Makarenko L, Pavlov J, Pukas K, Rumbauskas V, Gaubas E.
Ceponis T, et al. Among authors: lastovskii s.
Sensors (Basel). 2020 Dec 2;20(23):6884. doi: 10.3390/s20236884.
Sensors (Basel). 2020.
PMID: 33276481
Free PMC article.
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