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Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.
Kong Z, Li Z, Cao G, Su J, Zhang Y, Liu J, Liu J, Ren Y, Li H, Wei L, Guo GP, Wu Y, Radamson HH, Li J, Wu Z, Li HO, Yang J, Zhao C, Ye T, Wang G. Kong Z, et al. ACS Appl Mater Interfaces. 2023 Jun 14;15(23):28799-28805. doi: 10.1021/acsami.3c03294. Epub 2023 May 11. ACS Appl Mater Interfaces. 2023. PMID: 37166277
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH. Li J, et al. Among authors: kong z. Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771. Materials (Basel). 2020. PMID: 32046197 Free PMC article.
Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric Acids.
Li C, Zhu H, Zhang Y, Yin X, Jia K, Li J, Wang G, Kong Z, Du A, Yang T, Zhao L, Huang W, Xie L, Li Y, Ai X, Ma S, Radamson HH. Li C, et al. Among authors: kong z. ACS Appl Mater Interfaces. 2020 Oct 21;12(42):48170-48178. doi: 10.1021/acsami.0c14018. Epub 2020 Oct 9. ACS Appl Mater Interfaces. 2020. PMID: 32970945
Review of Si-Based GeSn CVD Growth and Optoelectronic Applications.
Miao Y, Wang G, Kong Z, Xu B, Zhao X, Luo X, Lin H, Dong Y, Lu B, Dong L, Zhou J, Liu J, Radamson HH. Miao Y, et al. Among authors: kong z. Nanomaterials (Basel). 2021 Sep 29;11(10):2556. doi: 10.3390/nano11102556. Nanomaterials (Basel). 2021. PMID: 34684996 Free PMC article. Review.
1,091 results