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Rashba Effect in Functional Spintronic Devices.
Koo HC, Kim SB, Kim H, Park TE, Choi JW, Kim KW, Go G, Oh JH, Lee DK, Park ES, Hong IS, Lee KJ. Koo HC, et al. Among authors: kim sb, kim h, kim kw. Adv Mater. 2020 Dec;32(51):e2002117. doi: 10.1002/adma.202002117. Epub 2020 Sep 15. Adv Mater. 2020. PMID: 32930418 Review.
Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.
Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Kim YH, et al. Among authors: kim ts, kim sb, kim jc. Adv Mater. 2024 Apr 22:e2314274. doi: 10.1002/adma.202314274. Online ahead of print. Adv Mater. 2024. PMID: 38647521
Simple, large-scale patterning of hydrophobic ZnO nanorod arrays.
Kim SB, Lee WW, Yi J, Park WI, Kim JS, Nichols WT. Kim SB, et al. Among authors: kim js. ACS Appl Mater Interfaces. 2012 Aug;4(8):3910-5. doi: 10.1021/am3007142. Epub 2012 Jul 18. ACS Appl Mater Interfaces. 2012. PMID: 22734585
2,447 results