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Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs.
Micromachines (Basel). 2023 Jul 28;14(8):1514. doi: 10.3390/mi14081514.
Micromachines (Basel). 2023.
PMID: 37630050
Free PMC article.
Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach.
Makarov A, Roussel P, Bury E, Vandemaele M, Spessot A, Linten D, Kaczer B, Tyaginov S.
Makarov A, et al. Among authors: kaczer b.
Micromachines (Basel). 2020 Jun 30;11(7):657. doi: 10.3390/mi11070657.
Micromachines (Basel). 2020.
PMID: 32630139
Free PMC article.
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Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories.
Ramesh S, Ajaykumar A, Ragnarsson LÅ, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié JP, Van den Bosch G, Rosmeulen M.
Ramesh S, et al. Among authors: kaczer b.
Micromachines (Basel). 2021 Sep 8;12(9):1084. doi: 10.3390/mi12091084.
Micromachines (Basel). 2021.
PMID: 34577727
Free PMC article.
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Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range.
Tyaginov S, Bury E, Grill A, Yu Z, Makarov A, De Keersgieter A, Vexler M, Vandemaele M, Wang R, Spessot A, Chasin A, Kaczer B.
Tyaginov S, et al. Among authors: kaczer b.
Micromachines (Basel). 2023 Oct 30;14(11):2018. doi: 10.3390/mi14112018.
Micromachines (Basel). 2023.
PMID: 38004876
Free PMC article.
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Junctionless versus inversion-mode lateral semiconductor nanowire transistors.
Veloso A, Matagne P, Simoen E, Kaczer B, Eneman G, Mertens H, Yakimets D, Parvais B, Mocuta D.
Veloso A, et al. Among authors: kaczer b.
J Phys Condens Matter. 2018 Sep 26;30(38):384002. doi: 10.1088/1361-648X/aad7c7. Epub 2018 Aug 3.
J Phys Condens Matter. 2018.
PMID: 30073974
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Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Waltl M, Knobloch T, Tselios K, Filipovic L, Stampfer B, Hernandez Y, Waldhör D, Illarionov Y, Kaczer B, Grasser T.
Waltl M, et al. Among authors: kaczer b.
Adv Mater. 2022 Dec;34(48):e2201082. doi: 10.1002/adma.202201082. Epub 2022 Apr 10.
Adv Mater. 2022.
PMID: 35318749
Review.
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Nanometer-Scale Creation and Characterization of Trapped Charge in SiO2 Films Using Ballistic Electron Emission Microscopy.
Kaczer B, Meng Z, Pelz JP.
Kaczer B, et al.
Phys Rev Lett. 1996 Jul 1;77(1):91-94. doi: 10.1103/PhysRevLett.77.91.
Phys Rev Lett. 1996.
PMID: 10061779
No abstract available.
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